Compared to other commonly referenced high - k materials , hfo2 is known for its stability on silicon and process compatibility . the fabrication and electrical properties of hfo2 and hfoxny gate are carefully studied . with the study on hfo2 . we can receive a few significative conclusion : 1 結果表明,與傳統的hf清洗的si表面相比, nh _ 4f清洗的si表面與hfo _ 2具有更好的熱力學穩定性,因而可獲得更低的eot和柵泄漏電流密度; 3 )研究了濺射氣氛和退火工藝對hfo _ 2柵介質薄膜性質的影響。